Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

The purpose of this study is to analyze the quality optical properties such as energy band gap thin layer tin oxide doped with aluminum, fluorine, indium, aluminum-fluorine, aluminum-indium, and aluminum-fluorine-indium. was synthesized using sol-gel spin coating method. ratio basic ingredients doping used in 95:5% 85:15%. that has been formed then heated at a temperature 100 200 0C. results analysis showed largest values direct indirect are indium percentage for 0C, namely 3.62 3.92 eV. lowest aluminum-fluorine-indium 85:15% 3.36 3.51 These indicate resulting decreases increasing concentration sintering temperature. Based on obtained, can be material semiconductors electronic devices.